2SK2755-01 - описание и поиск аналогов

N-channel MOS-FET 2SK2755-01 FAP-IIS Series 450V 0,45 18A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteri

2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2750 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.7 (typ.) (ON) High forward transfer admittance Y = 3.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

Silicon Junction FETs (Small Signal) 2SK2751 2SK2751 Silicon N-Channel Junction Unit mm For impedance conversion in low frequency +0.2 2.8 0.3 For pyro-electric sensor +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are a

UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number 2SK2751L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1

FUJI POWER MOSFET 2SK2756-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5 0.3 0.3 0.2 15.5 3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power 0.3 2.1 0.3 1.6 Avalanche-proof +0.2 1.1 0.1 0.2 3.5 0.2 +0.2 0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

FUJI POWER MOSFET 2SK2759-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5 0.3 0.3 0.2 15.5 3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power 0.3 2.1 0.3 1.6 Avalanche-proof +0.2 1.1 0.1 0.2 3.5 0.2 +0.2 0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

N-channel MOS-FET 2SK2753-01 FAP-IIS Series 120V 32m 50A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2753 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER