Справочник MOSFET. 2SK2760-01

 

2SK2760-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2760-01
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO3PF

 Аналог (замена) для 2SK2760-01

 

 

2SK2760-01 Datasheet (PDF)

 ..1. Size:291K  fuji
 2sk2760-01.pdf

2SK2760-01 2SK2760-01

N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

 8.1. Size:449K  fuji
 2sk2766-01r.pdf

2SK2760-01 2SK2760-01

 8.2. Size:28K  fuji
 2sk2767-01.pdf

2SK2760-01

N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

 8.3. Size:77K  fuji
 2sk2765-01.pdf

2SK2760-01 2SK2760-01

FUJI POWER MOSFET2SK2765-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui

 8.4. Size:61K  fuji
 2sk2764-01r.pdf

2SK2760-01 2SK2760-01

FUJI POWER MOSFET2SK2764-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS

 8.5. Size:133K  fuji
 2sk2769-01mr.pdf

2SK2760-01 2SK2760-01

FUJI POWER MOSFET2SK2769-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum

 8.6. Size:86K  fuji
 2sk2761-01mr.pdf

2SK2760-01 2SK2760-01

FUJI POWER MOSFET2SK2761-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum

 8.7. Size:266K  inchange semiconductor
 2sk2765-01.pdf

2SK2760-01 2SK2760-01

isc N-Channel MOSFET Transistor 2SK2765-01FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

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