2SK3923-01. Аналоги и основные параметры
Наименование производителя: 2SK3923-01
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 105 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 90 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO220AB
Аналог (замена) для 2SK3923-01
- подборⓘ MOSFET транзистора по параметрам
2SK3923-01 даташит
..1. Size:189K fuji
2sk3923-01.pdf 
2SK3923-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless
..2. Size:289K inchange semiconductor
2sk3923-01.pdf 
isc N-Channel MOSFET Transistor 2SK3923-01 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.1. Size:186K fuji
2sk3922-01.pdf 
2SK3922-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance Outline Drawings [mm] No secondary breadown Low driving power Avalanche-proof TFP Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless othe
8.2. Size:189K fuji
2sk3920-01.pdf 
2SK3920-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless
8.3. Size:93K fuji
2sk3926-01mr.pdf 
2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25
8.4. Size:154K fuji
2sk3924-01l-s-sj.pdf 
2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (
8.5. Size:113K fuji
2sk3928-01.pdf 
2SK3928-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.6. Size:227K fuji
2sk3921-01l-s-sj.pdf 
2SK3921-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C
8.7. Size:92K fuji
2sk3925-01.pdf 
2SK3925-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.8. Size:114K fuji
2sk3929.pdf 
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C
8.9. Size:153K fuji
2sk3927-01l-s-sj.pdf 
2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T
8.10. Size:289K inchange semiconductor
2sk3920-01.pdf 
isc N-Channel MOSFET Transistor 2SK3920-01 FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.11. Size:357K inchange semiconductor
2sk3921-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01SJ FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.12. Size:356K inchange semiconductor
2sk3927-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01S FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.13. Size:280K inchange semiconductor
2sk3929-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3929-01MR FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.14. Size:280K inchange semiconductor
2sk3926-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3926-01MR FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.15. Size:357K inchange semiconductor
2sk3924-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.16. Size:283K inchange semiconductor
2sk3927-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01L FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.17. Size:283K inchange semiconductor
2sk3921-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01L FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.18. Size:283K inchange semiconductor
2sk3924-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.19. Size:357K inchange semiconductor
2sk3927-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01SJ FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.20. Size:289K inchange semiconductor
2sk3928-01.pdf 
isc N-Channel MOSFET Transistor 2SK3928-01 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.21. Size:357K inchange semiconductor
2sk3921-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01S FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.22. Size:358K inchange semiconductor
2sk3924-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01SJ FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.23. Size:288K inchange semiconductor
2sk3925-01.pdf 
isc N-Channel MOSFET Transistor 2SK3925-01 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
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