isc N-Channel MOSFET Transistor 2SK3872-01SFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

2SK3872-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings

isc N-Channel MOSFET Transistor 2SK3872-01LFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu

2SK3870-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

2SK3871-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe

2SK3874-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a

isc N-Channel MOSFET Transistor 2SK3870FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 230V(Min)DSSStatic Drain-Source On-Resistance: R = 76m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3875-01FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK387DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed applications.such as off-line switching power supplies , UPS,AC and DCmotor controls,rel

isc N-Channel MOSFET Transistor 2SK3874-01RFEATURESDrain Current : I = 56A@ T =25D CDrain Source Voltage: V = 280V(Min)DSSStatic Drain-Source On-Resistance: R = 61m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK3873-01FEATURESDrain Current : I = 56A@ T =25D CDrain Source Voltage: V = 280V(Min)DSSStatic Drain-Source On-Resistance: R = 61m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK3879FEATURESDrain Current : I = 6.5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB