Справочник MOSFET. 2SK794

 

2SK794 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK794

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 900 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 110 ns

Выходная емкость (Cd): 190 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm

Тип корпуса: TO247AD

Аналог (замена) для 2SK794

 

 

2SK794 Datasheet (PDF)

1.1. 2sk794.pdf Size:43K _update

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1.2. 2sk794.pdf Size:204K _inchange_semiconductor

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isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

 5.1. 2sk792.pdf Size:43K _update

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5.2. 2sk795.pdf Size:145K _update

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 5.3. 2sk790.pdf Size:229K _update

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5.4. 2sk796-a.pdf Size:71K _update

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 5.5. 2sk791.pdf Size:101K _update

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5.6. 2sk793.pdf Size:237K _update-mosfet

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isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =850V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, convert

5.7. 2sk790.pdf Size:247K _update-mosfet

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isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.8. 2sk793.pdf Size:43K _toshiba2

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5.9. 2sk796a.pdf Size:197K _inchange_semiconductor

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isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.10. 2sk796.pdf Size:197K _inchange_semiconductor

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isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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