This product complies with the RoHS Directive (EU 2002/95/EC).Silicon Junction FETs (Small Signal)2SK3547Silicon N-channel MOSFETUnit: mm0.33+0.05 0.10+0.05For switching 0.02 0.023 Features High-speed switching0.23+0.05 1 2 Wide frequency band 0.02(0.40) (0.40) Gate-protection diode built-in0.800.051.200.055 Absolute Maximum Rating

2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK3544 Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.29 (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abs

2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: R = 1.9 (typ.) DS (ON) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: I = 100 A (max) (V = 450 V) DSS DS Enhancement-model

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET 1.20.32(3) Applications Interfacing, switching (30V, 100mA) (1)(2)0.220.130.4 0.4 0.50.8(1)Gate Features (2)Source(3)Drain Abbreviated symbol : KN1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET 1.20.32(3) Applications Interfacing, switching (30V, 100mA) (1)(2)0.220.130.4 0.4 0.50.8(1)Gate Features (2)Source(3)Drain Abbreviated symbol : KN1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon Junction FETs (Small Signal)2SK3546GSilicon N-Channel MOSFETFor switching Features Package Code High-speed switching Wide frequency band SSMini3-F3 Marking Symbol: 5F Pin Name Absolute Maximum Ratings Ta = 25C1: GateParameter Symbol Rating Unit2: SourceDrain-source volt

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon Junction FETs (Small Signal)2SK3546JSilicon N-Channel MOSFETUnit: mm1.60+0.050.030.12+0.03For switching 0.011.000.053 Features High-speed switching1 2 Wide frequency band 0.270.02(0.50)(0.50) Absolute Maximum Ratings Ta = 25C5Parameter Symbol Rating UnitDrain-sou

2SK3549-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeatures11.60.2High speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFETSOT-723 ID V(BR)DSS RDS(on)MAX 8@4V30V100mA13@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Drive circu

2SK3541MSurface Mount N-Channel MOSFETP b Lead(Pb)-Free311. Gate22. SourceFeatures:3. DrainLow on-resistance*Fast switching speed SOT-723*Low voltage drive(2.5V) makes this ideal for portable eqipmentu*Drive ircuits an e imple*3 DrainParallel se s asy* e eclare hat he aterial f roduct * ompliance ith RoHS equirements.*1 Gate

FM120-M WILLASTHRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOT-723 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

Spec. No. : C800Y3 Issued Date : 2011.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3541Y3 ID 100mA 3.4 (TYP) RDSON@4V 6.9 (TYP) RDSON@2.5V Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected dev

CHENMKO ENTERPRISE CO.,LTD2SK3541VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpereAPPLICATION* Interfacing, switching (30V, 100mA)FEATURESOT-563* Small surface mounting type. (SOT-563)* Low on-resistance* Fast switching speed* Easily designed drive circuits(1)* Easy to parallel(5)0.500.9~1.1 1.5~1.70.50

CHENMKO ENTERPRISE CO.,LTD2SK3541GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpereFEATURE* Small surface mounting type. (SOT-23) SOT-23* Low on-resistance* Fast switching speed* Easily designed drive circuits* Easy to parallel(1)(3)CONSTRUCTION(2)Silicon N-Channel MOSFET( ) ( ).055 1.40 .028 0.70( ) ( ).

CHENMKO ENTERPRISE CO.,LTD2SK3541SGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpereAPPLICATION* Interfacing, switching (30V, 100mA)FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* Low on-resistance* Fast switching speed* Easily designed drive circuits(1)(S1) (D1)(6)* Easy to parallel(G1) 0.6

CHENMKO ENTERPRISE CO.,LTD2SK3541MGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpereAPPLICATION* Interfacing, switching (30V, 100mA)FEATURESOT-723* Small surface mounting type. (SOT-723)* Low on-resistance* Fast switching speed* Easily designed drive circuits0.17~0.27* Easy to parallel(2)(3)0.41.15~1.250.

isc N-Channel MOSFET Transistor 2SK3549WFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3549NFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno