2SK3547 - описание и поиск аналогов

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3547 Silicon N-channel MOSFET Unit mm 0.33+0.05 0.10+0.05 For switching 0.02 0.02 3 Features High-speed switching 0.23+0.05 1 2 Wide frequency band 0.02 (0.40) (0.40) Gate-protection diode built-in 0.80 0.05 1.20 0.05 5 Absolute Maximum Rating

2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK3544 Unit mm Switching Regulator Applications Low drain-source ON-resistance RDS (ON) = 0.29 (typ.) High forward transfer admittance Yfs = 5.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 450 V) Enhancement mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abs

2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance R = 1.9 (typ.) DS (ON) High forward transfer admittance Yfs = 1.3 S (typ.) Low leakage current I = 100 A (max) (V = 450 V) DSS DS Enhancement-model

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET 1.2 0.32 (3) Applications Interfacing, switching (30V, 100mA) (1)(2) 0.22 0.13 0.4 0.4 0.5 0.8 (1)Gate Features (2)Source (3)Drain Abbreviated symbol KN 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET 1.2 0.32 (3) Applications Interfacing, switching (30V, 100mA) (1)(2) 0.22 0.13 0.4 0.4 0.5 0.8 (1)Gate Features (2)Source (3)Drain Abbreviated symbol KN 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching Features Package Code High-speed switching Wide frequency band SSMini3-F3 Marking Symbol 5F Pin Name Absolute Maximum Ratings Ta = 25 C 1 Gate Parameter Symbol Rating Unit 2 Source Drain-source volt

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET Unit mm 1.60+0.05 0.03 0.12+0.03 For switching 0.01 1.00 0.05 3 Features High-speed switching 1 2 Wide frequency band 0.27 0.02 (0.50)(0.50) Absolute Maximum Ratings Ta = 25 C 5 Parameter Symbol Rating Unit Drain-sou

2SK3549-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 ID V(BR)DSS RDS(on)MAX 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Drive circu

2SK3541M Surface Mount N-Channel MOSFET P b Lead(Pb)-Free 3 1 1. Gate 2 2. Source Features 3. Drain Low on-resistance * Fast switching speed SOT-723 * Low voltage drive(2.5V) makes this ideal for portable eqipment u * Drive ircuits an e imple * 3 Drain Parallel se s asy * e eclare hat he aterial f roduct * ompliance ith RoHS equirements. * 1 Gate

FM120-M WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOT-723 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

Spec. No. C800Y3 Issued Date 2011.12.22 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3541Y3 ID 100mA 3.4 (TYP) RDSON@4V 6.9 (TYP) RDSON@2.5V Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected dev

CHENMKO ENTERPRISE CO.,LTD 2SK3541VGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SOT-563 * Small surface mounting type. (SOT-563) * Low on-resistance * Fast switching speed * Easily designed drive circuits (1) * Easy to parallel (5) 0.50 0.9 1.1 1.5 1.7 0.50

CHENMKO ENTERPRISE CO.,LTD 2SK3541GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-23) SOT-23 * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel (1) (3) CONSTRUCTION (2) Silicon N-Channel MOSFET ( ) ( ) .055 1.40 .028 0.70 ( ) ( ) .

CHENMKO ENTERPRISE CO.,LTD 2SK3541SGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * Low on-resistance * Fast switching speed * Easily designed drive circuits (1) (S1) (D1)(6) * Easy to parallel (G1) 0.6

CHENMKO ENTERPRISE CO.,LTD 2SK3541MGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits 0.17 0.27 * Easy to parallel (2) (3) 0.4 1.15 1.25 0.

isc N-Channel MOSFET Transistor 2SK3549W FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3549N FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno