IRFBC40L - описание и поиск аналогов

PD - 95546 IRFBC40S/LPbF Lead-Free 7/22/04 Document Number 91116 www.vishay.com 1 IRFBC40S/LPbF Document Number 91116 www.vishay.com 2 IRFBC40S/LPbF Document Number 91116 www.vishay.com 3 IRFBC40S/LPbF Document Number 91116 www.vishay.com 4 IRFBC40S/LPbF Document Number 91116 www.vishay.com 5 IRFBC40S/LPbF Document Number 91116 www.vishay.com 6 IRFBC40S/LPbF

PD - 91016A IRFBC40S/L HEXFET Power MOSFET Surface Mount (IRFBC40S) D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating RDS(on) = 1.2 150 C Operating Temperature G Fast Switching ID = 6.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer with the bes

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ( )VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S) VDS (V) 600 Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) RDS(on) ( )VGS = 10 V 1.2 RoHS* Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 SiHFBC20S) Qgs (nC) 8.3 Dynamic dV/dt Rating Qgd (nC) 30 15

iscN-Channel MOSFET Transistor IRFBC40L FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf