Справочник MOSFET. 2SK3804-01S

 

2SK3804-01S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3804-01S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 140 ns
   Cossⓘ - Выходная емкость: 1050 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO263

 Аналог (замена) для 2SK3804-01S

 

 

2SK3804-01S Datasheet (PDF)

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 2sk3804-01s.pdf

2SK3804-01S 2SK3804-01S

2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic High speed switching Low on-resistance Drain (D) No secondary breakdown Low driving power Avalanche-proof Applications Gate (G) Switching regulators Source (S) DC-DC converters General purpose power amplifier Abso

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 2sk3804-01s.pdf

2SK3804-01S 2SK3804-01S

isc N-Channel MOSFET Transistor 2SK3804-01SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:45K  sanken-ele
 2sk3800.pdf

2SK3804-01S

MOS FET 2SK3800Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S(Ta=25C) (Ta=25C)Symbol Ratings Unit RatingsSymbol Test Conditions Unitmin typ maxV 40 VDSS4.440.2(5) 1.30.2V 20 V V I = 100A, V = 0V VGSS (BR) DSS D GS 40I 70 A I V = 15V 10 AD GSS GSV = 40V, V = 0V AI *1 140 A I DS GS 100D (pulse) DSS2.60.2

 8.2. Size:45K  sanken-ele
 2sk3801.pdf

2SK3804-01S

MOS FET 2SK3801Absolute Maximum Ratings Electrical Characteristics External Dimensions TO-3P(Ta=25C) (Ta=25C)Symbol Ratings Unit RatingsSymbol Test Conditions Unit 15.60.4min typ maxV 40 V 4.80.2DSS13.6V 20 V V I = 100A, V = 0VGSS (BR) DSS D GS 40 V9.6 2.00.1I 70 A I V = 15V 10 AD GSS GSAI *1 140 V = 40V, V = 0V 100D (pulse) A I DS GSD

 8.3. Size:255K  inchange semiconductor
 2sk3800.pdf

2SK3804-01S 2SK3804-01S

isc N-Channel MOSFET Transistor 2SK3800FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

 8.4. Size:259K  inchange semiconductor
 2sk3801.pdf

2SK3804-01S 2SK3804-01S

isc N-Channel MOSFET Transistor 2SK3801FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

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