2SJ220S - описание и поиск аналогов

Ordering number EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ227] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

Ordering number EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ226] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

Ordering number EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ229] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

Ordering number EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ228] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum R

Ordering number EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ225] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous ADE-208-1186) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION Low On Resistance High Speed Switching Low Drive Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) -100 V DSS GS V Gate-Source Voltage 20 V