SMD Type MOSFETP-Channel MOSFET2SJ606-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 15m (VGS =-10V) RDS(ON) 23m (VGS =-4V) Low Ciss: Ciss = 4800 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ606SWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor high current switching applications.2SJ606 TO-220AB2SJ606-S TO-262FEATURES2SJ606-ZJ TO-263 Super low on-state resistance:NoteRDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A