2SJ279S - описание и поиск аналогов

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 Low on resistance 2, 4 High speed switching 1 2 3 Low drive current 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche Ratings 3 4. Drai

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 Low on resistance 2, 4 High speed switching 1 2 3 Low drive current 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche Ratings 3 4. Drai

Ordering number EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ274] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

Ordering number EN4241 P-Channel Silicon MOSFET 2SJ277 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ277] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ277-applied equipment

Ordering number EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ275] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ275-applied equipment

Ordering number EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ272] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

Ordering number EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ276] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ276- applied equipment. High-density

Ordering number EN4748 P-Channel Silicon MOSFET 2SJ273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ273] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PLZZ0004CA-A

isc P-Channel MOSFET Transistor 2SJ274 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(