Справочник MOSFET. IRFBL10N60A

 

IRFBL10N60A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFBL10N60A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 254 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.61 Ohm
   Тип корпуса: SUPERD2PAK

 Аналог (замена) для IRFBL10N60A

 

 

IRFBL10N60A Datasheet (PDF)

 ..1. Size:120K  international rectifier
irfbl10n60a.pdf

IRFBL10N60A
IRFBL10N60A

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

 8.1. Size:29K  international rectifier
irfbl18n50k.pdf

IRFBL10N60A
IRFBL10N60A

PD- 93928PROVISIONALIRFBL18N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply500V 0.25 18ABenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Improved Avalanche Ruggedness andDynamic dv/dt, Fully CharacterizedAvalanche Vo

 8.2. Size:29K  international rectifier
irfbl17n50l.pdf

IRFBL10N60A
IRFBL10N60A

PD- 93929PROVISIONALIRFBL17N50LSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control500V 0.28 17A UninterruptIble Power SupplyBenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness andD

 8.3. Size:175K  international rectifier
irfbl12n50a.pdf

IRFBL10N60A
IRFBL10N60A

PD - 91818ASMPS MOSFETIRFBL12N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-D2PakTMAvalanche V

Другие MOSFET... IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFB3306 , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 .

 

 
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