2SJ357 - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings (unit mm) used as a switching element. The 2SJ357 can be directly 5.7 0.1 driven by an IC operating at 5 V. 1.5 0.1 2.0 0.2 The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable

Preliminary Data Sheet 2SJ358C R07DS1262EJ0300 Rev.3.00 P-CHANNEL MOSFET FOR SWITCHING Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 143 m MAX. (VGS = -1

2010 4 1 NEC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ350 Silicon P Channel MOS FET REJ03G0859-0200 (Previous ADE-208-138) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit mm) The 2SJ358 is a P-channel vertical MOS FET that can 5.7 0.1 be used as a switching element. The 2SJ358 can be 1.5 0.1 2.0 0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 7.0 MAX. 1.2 IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actu

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for drivi

SMD Type MOSFET P-Channel MOSFET 2SJ356 1.70 0.1 Features VDS (V) =-60V ID =-2 A (VGS =-10V) 0.42 0.1 RDS(ON) 0.5 (VGS =-10V) 0.46 0.1 RDS(ON) 0.95 (VGS =-4V) 1.Gate 2.Drain Drain (D) 3.Source Internal Gate (G) diode Gate protection diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

2SJ355 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL