AO4262E
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO4262E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 19
ns
Cossⓘ - Выходная емкость: 520
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065
Ohm
Тип корпуса:
SO-8
Аналог (замена) для AO4262E
AO4262E
Datasheet (PDF)
..1. Size:388K aosemi
ao4262e.pdf 
AO4262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:377K aosemi
ao4268.pdf 
AO4268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 19A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:390K aosemi
ao4264e.pdf 
AO4264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:332K aosemi
ao4264c.pdf 
AO4264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.4. Size:389K aosemi
ao4266.pdf 
AO426660V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 10A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:383K aosemi
ao4266e.pdf 
AO4266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.6. Size:338K aosemi
ao4260.pdf 
AO426060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO4260 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 18Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.7. Size:367K aosemi
ao4264.pdf 
AO426460V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:2186K kexin
ao4266.pdf 
SMD Type MOSFETN-Channel MOSFETAO4266 (KO4266)SOP-8 Features VDS (V) = 60V ID = 10 A (VGS = 10V) RDS(ON) 15m (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-
9.9. Size:1746K kexin
ao4260.pdf 
SMD Type MOSFETN-Channel MOSFETAO4260 (KO4260)SOP-8 Features VDS (V) = 60V ID = 18 A (VGS = 10V) RDS(ON) 5.2m (VGS = 10V)1.50 0.15 RDS(ON) 6.3m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat
9.10. Size:2479K kexin
ao4264.pdf 
SMD Type MOSFETN-Channel MOSFETAO4264 (KO4264)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 11m (VGS = 10V)1.50 0.15 RDS(ON) 13.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat
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