Справочник MOSFET. AO4266E

 

AO4266E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AO4266E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для AO4266E

 

 

AO4266E Datasheet (PDF)

 ..1. Size:383K  aosemi
 ao4266e.pdf

AO4266E AO4266E

AO4266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.1. Size:389K  aosemi
 ao4266.pdf

AO4266E AO4266E

AO426660V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 10A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:2186K  kexin
 ao4266.pdf

AO4266E AO4266E

SMD Type MOSFETN-Channel MOSFETAO4266 (KO4266)SOP-8 Features VDS (V) = 60V ID = 10 A (VGS = 10V) RDS(ON) 15m (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-

 9.1. Size:388K  aosemi
 ao4262e.pdf

AO4266E AO4266E

AO4262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:377K  aosemi
 ao4268.pdf

AO4266E AO4266E

AO4268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 19A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:390K  aosemi
 ao4264e.pdf

AO4266E AO4266E

AO4264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:332K  aosemi
 ao4264c.pdf

AO4266E AO4266E

AO4264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 9.5. Size:338K  aosemi
 ao4260.pdf

AO4266E AO4266E

AO426060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO4260 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 18Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.6. Size:367K  aosemi
 ao4264.pdf

AO4266E AO4266E

AO426460V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:1746K  kexin
 ao4260.pdf

AO4266E AO4266E

SMD Type MOSFETN-Channel MOSFETAO4260 (KO4260)SOP-8 Features VDS (V) = 60V ID = 18 A (VGS = 10V) RDS(ON) 5.2m (VGS = 10V)1.50 0.15 RDS(ON) 6.3m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat

 9.8. Size:2479K  kexin
 ao4264.pdf

AO4266E AO4266E

SMD Type MOSFETN-Channel MOSFETAO4264 (KO4264)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 11m (VGS = 10V)1.50 0.15 RDS(ON) 13.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat

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