Справочник MOSFET. AOI2606

 

AOI2606 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOI2606
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 345 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: TO-251A

 Аналог (замена) для AOI2606

 

 

AOI2606 Datasheet (PDF)

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 aoi2606.pdf

AOI2606 AOI2606

AOD2606/AOI260660V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:272K  inchange semiconductor
 aoi2606.pdf

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isc N-Channel MOSFET Transistor AOI2606FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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 aod2610e aoi2610e aoy2610e.pdf

AOI2606 AOI2606

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:411K  aosemi
 aoi2610e.pdf

AOI2606 AOI2606

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:267K  aosemi
 aoi2610.pdf

AOI2606 AOI2606

AOD2610/AOI261060V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:273K  inchange semiconductor
 aoi2614.pdf

AOI2606 AOI2606

isc N-Channel MOSFET Transistor AOI2614FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R =16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.5. Size:273K  inchange semiconductor
 aoi2610e.pdf

AOI2606 AOI2606

isc N-Channel MOSFET Transistor AOI2610EFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.6. Size:274K  inchange semiconductor
 aoi2610.pdf

AOI2606 AOI2606

isc N-Channel MOSFET Transistor AOI2610FEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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