IRFD310 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFD310
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.35 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 17(max) nC
trⓘ - Время нарастания: 9.9 ns
Cossⓘ - Выходная емкость: 34 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.6 Ohm
Тип корпуса: HD-1
IRFD310 Datasheet (PDF)
irfd310pbf.pdf
PD- 95932IRFD310PbF Lead-Free10/28/04Document Number: 91133 www.vishay.com1IRFD310PbFDocument Number: 91133 www.vishay.com2IRFD310PbFDocument Number: 91133 www.vishay.com3IRFD310PbFDocument Number: 91133 www.vishay.com4IRFD310PbFDocument Number: 91133 www.vishay.com5IRFD310PbFDocument Number: 91133 www.vishay.com6IRFD310PbFDocument Number: 91
irfd310.pdf
PD -9.1225IRFD310HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 3.6Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.35ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd310 sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd310pbf sihfd310.pdf
IRFD310, SiHFD310Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 17 End StackableQgs (nC) 3.4 Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Single Simple Drive Requirement
irfd320pbf.pdf
PD- 95930IRFD320PbF Lead-Free10/28/04Document Number: 91134 www.vishay.com1IRFD320PbFDocument Number: 91134 www.vishay.com2IRFD320PbFDocument Number: 91134 www.vishay.com3IRFD320PbFDocument Number: 91134 www.vishay.com4IRFD320PbFDocument Number: 91134 www.vishay.com5IRFD320PbFDocument Number: 91134 www.vishay.com6IRFD320PbFDocument Number: 91
irfd320.pdf
PD -9.1226IRFD320HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 400VFor Automatic InsertionEnd StackableRDS(on) = 1.8Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.49ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd320pbf sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
irfd320 sihfd320.pdf
IRFD320, SiHFD320Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 20 End StackableQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive RequirementsD C
Другие MOSFET... IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRF9640 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRFD9210 , IRFD9220 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918