Справочник MOSFET. AON6358

 

AON6358 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON6358
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 1000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для AON6358

 

 

AON6358 Datasheet (PDF)

 ..1. Size:344K  aosemi
 aon6358.pdf

AON6358 AON6358

AON635830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:346K  1
 aon6354.pdf

AON6358 AON6358

AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:346K  aosemi
 aon6354.pdf

AON6358 AON6358

AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:339K  1
 aon6382.pdf

AON6358 AON6358

AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:368K  1
 aon6380.pdf

AON6358 AON6358

AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:615K  1
 aon6324.pdf

AON6358 AON6358

AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:261K  aosemi
 aon6312.pdf

AON6358 AON6358

AON631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 130A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:261K  aosemi
 aon6370.pdf

AON6358 AON6358

AON637030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:459K  aosemi
 aon6362.pdf

AON6358 AON6358

AON636230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:339K  aosemi
 aon6382.pdf

AON6358 AON6358

AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:268K  aosemi
 aon6360.pdf

AON6358 AON6358

AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.9. Size:265K  aosemi
 aon6368.pdf

AON6358 AON6358

AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:344K  aosemi
 aon6384.pdf

AON6358 AON6358

AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 9.11. Size:259K  aosemi
 aon6372.pdf

AON6358 AON6358

AON637230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)

 9.12. Size:368K  aosemi
 aon6380.pdf

AON6358 AON6358

AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)

 9.13. Size:359K  aosemi
 aon6314.pdf

AON6358 AON6358

AON631430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.14. Size:362K  aosemi
 aon6366e.pdf

AON6358 AON6358

AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)

 9.15. Size:352K  aosemi
 aon6324.pdf

AON6358 AON6358

AON632430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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