Справочник MOSFET. 2N6661-220M

 

2N6661-220M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N6661-220M

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 6.25 W

Предельно допустимое напряжение сток-исток |Uds|: 90 V

Пороговое напряжение включения |Ugs(th)|: 2 V

Максимально допустимый постоянный ток стока |Id|: 0.9 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 50 pf

Сопротивление сток-исток открытого транзистора (Rds): 4 Ohm

Тип корпуса: TO220M

Аналог (замена) для 2N6661-220M

 

 

2N6661-220M Datasheet (PDF)

6.1. 2n6661-2.pdf Size:125K _vishay

2N6661-220M
2N6661-220M

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXVwww.vishay.comVishay SiliconixN-Channel 90 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 90 Low On-Resistence: 3.6 RDS(on) () at VGS = 10 V 4 Low Threshold: 1.6 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 6 nsTO-205AD Low Input and Output Leakage(TO-39

8.1. 2n6661 vn88afd.pdf Size:73K _vishay

2N6661-220M
2N6661-220M

2N6661/VN88AFDVishay SiliconixN-Channel 80-V and 90-V (D-S) MOSFETSPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOSD Low Threshold: 1.6 V D Low-Voltage O

8.2. 2n6660 2n6661.pdf Size:21K _supertex

2N6661-220M
2N6661-220M

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa

 8.3. 2n6661.pdf Size:369K _supertex

2N6661-220M
2N6661-220M

Supertex inc.2N6661N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produc

8.4. 2n6661csm4.pdf Size:86K _semelab

2N6661-220M
2N6661-220M

2N6661CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13ENHANCEMENT MODE (0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.V 90V(0.009)DSS3 2I 0.9AD0.234 1min.(0.009)R 4.0 DS(on)FEATURES 1.02 0.20 2.03 0.20(0.04 0.008) (0.08 0.008) Faster switching Low Ciss

 8.5. 2n6661dcsm.pdf Size:36K _semelab

2N6661-220M
2N6661-220M

2N6661DCSM MECHANICAL DATA DUAL NCHANNEL Dimensions in mm (inches) ENHANCEMENT MODE 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)MOSFET 2 3VDSS 90V 1 4ID 0.9A A0.236 5rad.RDS(on) 4.0 (0.009)6.22 0.13 A = 1.27 0.13(0.05 0.005)(0.245 0.005)FEATURES Faster switching Low Ciss In

8.6. 2n6661m1a.pdf Size:724K _semelab

2N6661-220M
2N6661-220M

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

Другие MOSFET... 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , IRF150 , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 , 2N6756 , 2N6756JAN .

 

 
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