Справочник MOSFET. AOT2904

 

AOT2904 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT2904
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 326 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 605 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0044 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AOT2904

 

 

AOT2904 Datasheet (PDF)

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 aot2904.pdf

AOT2904 AOT2904

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:206K  inchange semiconductor
 aot2904.pdf

AOT2904 AOT2904

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT2904FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

 8.1. Size:341K  aosemi
 aot290l aob290l.pdf

AOT2904 AOT2904

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 8.2. Size:341K  aosemi
 aot290l.pdf

AOT2904 AOT2904

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)

 8.3. Size:373K  aosemi
 aot2906.pdf

AOT2904 AOT2904

AOT2906/AOB2906TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)

 8.4. Size:245K  inchange semiconductor
 aot290l.pdf

AOT2904 AOT2904

isc N-Channel MOSFET Transistor AOT290LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.5. Size:245K  inchange semiconductor
 aot2906.pdf

AOT2904 AOT2904

isc N-Channel MOSFET Transistor AOT2906FEATURESDrain Current I = 122A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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