AOTF2146L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF2146L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 29.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 80
A
trⓘ -
Время нарастания: 18.5
ns
Cossⓘ - Выходная емкость: 630
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028
Ohm
Тип корпуса:
TO220F
Аналог (замена) для AOTF2146L
AOTF2146L
Datasheet (PDF)
..1. Size:332K aosemi
aotf2146l.pdf AOTF2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:250K inchange semiconductor
aotf2146l.pdf isc N-Channel MOSFET Transistor AOTF2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
7.1. Size:301K 1
aotf2144l.pdf AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)
7.2. Size:357K aosemi
aotf2144l.pdf AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)
7.3. Size:423K aosemi
aotf2142l.pdf AOT2142L/AOTF2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)
7.4. Size:250K inchange semiconductor
aotf2144l.pdf isc N-Channel MOSFET Transistor AOTF2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
7.5. Size:201K inchange semiconductor
aotf2142l.pdf INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOTF2142LFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction lossesOptimized for fast-switching applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch
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