AOW290 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOW290
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 500 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.1 V
Максимально допустимый постоянный ток стока |Id|: 140 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 65 ns
Выходная емкость (Cd): 2780 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0032 Ohm
Тип корпуса: TO262
AOW290 Datasheet (PDF)
aow290.pdf
AOW290100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)
aow290.pdf
isc N-Channel MOSFET Transistor AOW290FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aow298.pdf
AOW298 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW298 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 58Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
aow296.pdf
AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)
aow2918.pdf
AOW2918100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2918 uses Trench MOSFET technology that 100Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 90Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
aow29s50.pdf
AOW29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOW29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with
aow292.pdf
AOW292100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge RDS(ON) (at VGS=10V)
aow298.pdf
isc N-Channel MOSFET Transistor AOW298FEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aow296.pdf
isc N-Channel MOSFET Transistor AOW296FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
aow2918.pdf
isc N-Channel MOSFET Transistor AOW2918FEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aow29s50.pdf
isc N-Channel MOSFET Transistor AOW29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aow292.pdf
isc N-Channel MOSFET Transistor AOW292FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
