2N7225 datasheet, подбор замены

 ..1. Size:64K  omnirel
 2n7224 2n7225 2n7227 2n7228.pdf 

2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L

 0.1. Size:165K  microsemi
 2n7225u.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C u

 9.1. Size:271K  international rectifier
 2n7227u.pdf 

PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 14A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi

 9.2. Size:220K  international rectifier
 2n7221u.pdf 

PD-91550D IRFN340 JANTX2N7221U JANTXV2N7221U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 10A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

 9.3. Size:165K  international rectifier
 2n7224u.pdf 

PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 34A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 9.4. Size:180K  international rectifier
 2n7228u.pdf 

PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 12A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 9.5. Size:179K  international rectifier
 2n7222u.pdf 

PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 8.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 9.6. Size:226K  international rectifier
 2n7222 2n7222 irfm440.pdf 

 9.7. Size:64K  omnirel
 2n7218 2n7219 2n7221 2n7222.pdf 

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L

 9.8. Size:62K  apt
 2n7227.pdf 

D TO-254 G 2N7227 400 Volt 0.315 S JX2N7227* JV2N7227* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7227 UNIT VDSS Drain-Source Voltage 400 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 14 ID Co

 9.9. Size:61K  apt
 2n7228.pdf 

D TO-254 G 2N7228 500 Volt 0.415 S JX2N7228* JV2N7228* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7228 UNIT VDSS Drain-Source Voltage 500 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 12 ID Co

 9.10. Size:23K  semelab
 2n7224 irfm150.pdf 

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0