Справочник MOSFET. AP09N90CW

 

AP09N90CW MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP09N90CW
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 208 W
   Предельно допустимое напряжение сток-исток |Uds|: 900 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 7.6 A
   Общий заряд затвора (Qg): 50.7 nC
   Время нарастания (tr): 16 ns
   Выходная емкость (Cd): 516 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для AP09N90CW

 

 

AP09N90CW Datasheet (PDF)

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ap09n90cw.pdf

AP09N90CW
AP09N90CW

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible

 0.1. Size:60K  ape
ap09n90cw-hf.pdf

AP09N90CW
AP09N90CW

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C provides minimize on-state resistance , superior switchingperformance and high efficiency switching power su

 7.1. Size:97K  ape
ap09n90w.pdf

AP09N90CW
AP09N90CW

AP09N90WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche test D BVDSS 900V Fast Switching RDS(ON) 1.2 Simple Drive Requirement ID 8.6AGSDescriptionAP09N90 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. TO- 3Ptype provide high block

 9.1. Size:238K  ape
ap09n20h.pdf

AP09N90CW
AP09N90CW

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 9.2. Size:93K  ape
ap09n20bgh-hf.pdf

AP09N90CW
AP09N90CW

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f

 9.3. Size:216K  ape
ap09n20h j-hf.pdf

AP09N90CW
AP09N90CW

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGDSTO-252(H)the best combination of fast switching,

 9.4. Size:97K  ape
ap09n70i-a.pdf

AP09N90CW
AP09N90CW

AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe

 9.5. Size:201K  ape
ap09n70r-a.pdf

AP09N90CW
AP09N90CW

AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAP09N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance an

 9.6. Size:64K  ape
ap09n70p-h-lf ap09n70p-h.pdf

AP09N90CW
AP09N90CW

AP09N70P/R-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3AGSDescriptionGAP09N70 series are specially designed as main switching devices forTO-220(P)DSuniversal 90~265VAC off-line AC/DC converter app

 9.7. Size:230K  ape
ap09n20bgh.pdf

AP09N90CW
AP09N90CW

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th

 9.8. Size:59K  ape
ap09n50i-hf.pdf

AP09N90CW
AP09N90CW

AP09N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 9.9. Size:59K  ape
ap09n50i.pdf

AP09N90CW
AP09N90CW

AP09N50IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresistan

 9.10. Size:202K  ape
ap09n20j.pdf

AP09N90CW
AP09N90CW

AP09N20H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS CompliantGSDescriptionAP09N20 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possibl

 9.11. Size:120K  ape
ap09n70p-a.pdf

AP09N90CW
AP09N90CW

AP09N70P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 0.75GG Simple Drive Requirement ID 9AS RoHS CompliantSDescriptionThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is suited for DC-DC ,AC-DC converte

 9.12. Size:58K  ape
ap09n20bgp-hf.pdf

AP09N90CW
AP09N90CW

AP09N20BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GT

 9.13. Size:55K  ape
ap09n20bgs-hf.pdf

AP09N90CW
AP09N90CW

AP09N20BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated designand silicon process technology to achieve the l

 9.14. Size:97K  ape
ap09n70r.pdf

AP09N90CW
AP09N90CW

AP09N70RRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 600VDD Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGGSSDescriptionAP09N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.The TO-262 typeprovi

 9.15. Size:97K  ape
ap09n70r-a-hf.pdf

AP09N90CW
AP09N90CW

AP09N70R-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VDD Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGG RoHS CompliantSSDescriptionAP09N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.

 9.16. Size:98K  ape
ap09n70i-a-hf.pdf

AP09N90CW
AP09N90CW

AP09N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res

 9.17. Size:63K  ape
ap09n70i-h-hf.pdf

AP09N90CW
AP09N90CW

AP09N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 9.18. Size:57K  ape
ap09n70p-a-hf.pdf

AP09N90CW
AP09N90CW

AP09N70P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP09N70 series are from Advanced Power innovated designand silicon process technology to achieve the lowe

 9.19. Size:58K  ape
ap09n20bgi-hf.pdf

AP09N90CW
AP09N90CW

AP09N20BGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gr

 9.20. Size:95K  ape
ap09n50p-hf.pdf

AP09N90CW
AP09N90CW

AP09N50P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 500V Fast Switching Characteristic RDS(ON) 0.75 RoHS Compliant & Halogen-Free ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowG

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