Справочник MOSFET. AP85T08GS

 

AP85T08GS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP85T08GS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 138 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 670 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

AP85T08GS Datasheet (PDF)

 ..1. Size:97K  ape
 ap85t08gp ap85t08gs.pdf pdf_icon

AP85T08GS

AP85T08GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD

 ..2. Size:204K  ape
 ap85t08gs.pdf pdf_icon

AP85T08GS

AP85T08GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAP85T08 series are from Advanced Power innovated designand silicon process technology to achieve t

 0.1. Size:97K  ape
 ap85t08gsp-hf.pdf pdf_icon

AP85T08GS

AP85T08GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 80V Lower On-resistance RDS(ON) 13m Fast Switching Characteristic ID 75AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin

 8.1. Size:98K  ape
 ap85t03gh-hf ap85t03gj-hf.pdf pdf_icon

AP85T08GS

AP85T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suite

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N90L-T3N-T | WMO20N15T2 | BRCS100N06BD | SSF20N60H | LNH06R110 | TPC65R260M | 2SK417

 

 
Back to Top

 


 
.