AP40T10GH. Аналоги и основные параметры
Наименование производителя: AP40T10GH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A
Электрические характеристики
tr ⓘ - Время нарастания: 64 ns
Cossⓘ - Выходная емкость: 270 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO252
Аналог (замена) для AP40T10GH
- подборⓘ MOSFET транзистора по параметрам
AP40T10GH даташит
ap40t10gh.pdf
AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G AP40T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to achieve the
ap40t10gh.pdf
AP40T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle
ap40t10gh-hf.pdf
AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G D Advanced Power MOSFETs from APEC provide the designer with S TO-252(H) the best combination of fast switching, ru
ap40t10gr.pdf
AP40T10GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist
Другие MOSFET... AP3989R , AP98T03GS , AP75T10BGP , AP75T10GP , AP75T12GP , AP85T08GS , AP95T06GP , AP95T06GS , AO3400 , AP40T10GP , AP85T03GP , AP85T03GS , AP2761S-A , AP2R803GJB , AP3987P , AP9974AGH , AP9974AGP .
History: SVT068R5NT | H10N60F | MTB028N10QNCQ8 | IRLML5203PBF | 2SK3915-01MR
History: SVT068R5NT | H10N60F | MTB028N10QNCQ8 | IRLML5203PBF | 2SK3915-01MR
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061








