AP0904GJB Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP0904GJB
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 51 A
tr ⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO251S
Аналог (замена) для AP0904GJB
AP0904GJB Datasheet (PDF)
ap0904gjb.pdf

AP0904GJB-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized
ap0904gjb-hf.pdf

AP0904GJB-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized
ap0904gh-hf ap0904gj-hf.pdf

AP0904GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast
ap0904gyt-hf.pdf

AP0904GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD Small Size & Lower Profile RDS(ON) 11.5m RoHS Compliant & Halogen-Free ID 13.5AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device d
Другие MOSFET... AP6679BGH , AP6679BGJ , AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AON6380 , AP75T10GI , AP60T03GH , AP01N60J , AP9563GH , AP9563GJ , AP9971GP , AP9971GS , AP40T10GI .
History: 5N65G-TN3-R | AOI600A60 | FDMA86108LZ | CJP10N65
History: 5N65G-TN3-R | AOI600A60 | FDMA86108LZ | CJP10N65



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705 | bc239 | 2sc3264 | mp38a