AP60T03GH. Аналоги и основные параметры
Наименование производителя: AP60T03GH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Электрические характеристики
tr ⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO252
Аналог (замена) для AP60T03GH
- подборⓘ MOSFET транзистора по параметрам
AP60T03GH даташит
ap60t03gh.pdf
AP60T03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description AP60T03 series are from Advanced Power innovated d
ap60t03gh j-hf.pdf
AP60T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
ap60t03gh j ap60t03gj ap60t03gh.pdf
AP60T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
ap60t03gi.pdf
AP60T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Low Gate Charge RDS(ON) 12m Fast Switching ID 45A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effective
Другие MOSFET... AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , AP16N50I , AP0904GH , AP0904GJB , AP75T10GI , 8N60 , AP01N60J , AP9563GH , AP9563GJ , AP9971GP , AP9971GS , AP40T10GI , AP2764AI-A , AP20N15GI .
History: IPP086N10N3 | JCS18N50WH | AP9962AGM | AP0904GH | AP15TP1R0M | MME65R280QRH | STF13NM60ND
History: IPP086N10N3 | JCS18N50WH | AP9962AGM | AP0904GH | AP15TP1R0M | MME65R280QRH | STF13NM60ND
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Список транзисторов
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