AP9987GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9987GJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO251
AP9987GJ Datasheet (PDF)
ap9987gj.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9987gj.pdf
AP9987GJwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
ap9987gh-hf ap9987gj-hf.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9987gjv.pdf
AP9987GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible o
ap9987gh j-hf.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switchi
ap9987gh.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9987gm.pdf
AP9987GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 90mD1D1 Surface Mount Package ID 3.5AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918