AP10TN135M - аналоги и даташиты транзистора

 

AP10TN135M - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10TN135M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для AP10TN135M

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10TN135M Datasheet (PDF)

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 ap10tn135m.pdf pdf_icon

AP10TN135M

AP10TN135MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDD Fast Switching Characteristic D RDS(ON) 135mD Low Gate Charge ID 3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP10TN135 series are from Advanced Power innovated designand silicon process technology t

 5.1. Size:201K  ape
 ap10tn135h.pdf pdf_icon

AP10TN135M

AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 5.2. Size:166K  ape
 ap10tn135j.pdf pdf_icon

AP10TN135M

AP10TN135JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andGDSsilicon process technology to achieve

 5.3. Size:188K  ape
 ap10tn135n.pdf pdf_icon

AP10TN135M

AP10TN135NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP10TN135 series are from Advanced Power innovated designand silicon process technology to achieve the

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