AP10TN135M - описание и поиск аналогов

 

AP10TN135M. Аналоги и основные параметры

Наименование производителя: AP10TN135M

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm

Тип корпуса: SO8

Аналог (замена) для AP10TN135M

- подборⓘ MOSFET транзистора по параметрам

 

AP10TN135M даташит

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AP10TN135M

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t

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ap10tn135h.pdfpdf_icon

AP10TN135M

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 5.2. Size:166K  ape
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AP10TN135M

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve

 5.3. Size:188K  ape
ap10tn135n.pdfpdf_icon

AP10TN135M

AP10TN135N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the

Другие MOSFET... AP4578GH , AP4430GM , AP9420GM , AP9408GM , AP0403GM , AP0603GM , AP0903GM , AP10TN030M , IRFB4115 , AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M .

 

 

 

 

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