Справочник MOSFET. AP4P018M

 

AP4P018M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP4P018M
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 285 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для AP4P018M

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP4P018M Datasheet (PDF)

 ..1. Size:185K  ape
 ap4p018m.pdf pdf_icon

AP4P018M

AP4P018MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -40V Fast Switching Characteristic RDS(ON) 18m Simple Drive Requirement ID3 -9.4AG RoHS Compliant & Halogen-FreeSDescriptionDDAP4P018 series are from Advanced Power innovated design and siliconDDprocess technology to achieve th

 8.1. Size:176K  ape
 ap4p013les.pdf pdf_icon

AP4P018M

AP4P013LESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 14.5m Fast Switching Characteristic ID -50AG RoHS Compliant & Halogen-FreeSDescriptionAP4P013LE series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 8.2. Size:204K  ape
 ap4p012leh.pdf pdf_icon

AP4P018M

AP4P012LEHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -51AG RoHS Compliant & Halogen-FreeSDescriptionAP4P012LE series are from Advanced Power innovated design and GDsilicon process technology to achieve the

 8.3. Size:179K  ape
 ap4p016i.pdf pdf_icon

AP4P018M

AP4P016IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID4 -36AG RoHS Compliant & Halogen-FreeSDescriptionAP4P016 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possib

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Другие MOSFET... AP4028EM , AP4034GM , AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , RFP50N06 , AP6679BGM , AP6N021M , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM .

History: IXFN360N10T | RFP12N10 | RJK6013DPE

 

 
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