Справочник MOSFET. AP09T10GK

 

AP09T10GK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP09T10GK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
   Qgⓘ - Общий заряд затвора: 5 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 32 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для AP09T10GK

 

 

AP09T10GK Datasheet (PDF)

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 ap09t10gk.pdf

AP09T10GK AP09T10GK

AP09T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin

 0.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf

AP09T10GK AP09T10GK

AP09T10GK-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theSThe Advanced Power MOSFETs from APEC provide the

 6.1. Size:48K  ape
 ap09t10gh-hf.pdf

AP09T10GK AP09T10GK

AP09T10GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provi

 6.2. Size:48K  ape
 ap09t10gp-hf.pdf

AP09T10GK AP09T10GK

AP09T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provi

 6.3. Size:194K  ape
 ap09t10gh.pdf

AP09T10GK AP09T10GK

AP09T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching,

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