AP6N090LK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP6N090LK
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.78 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 2.5 V
Максимально допустимый постоянный ток стока (Id): 4.1 A
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 35 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.09 Ohm
Тип корпуса: SOT223
AP6N090LK Datasheet (PDF)
3.1. ap6n090y.pdf 
Size:210K _a-power
AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement S BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ D ▼ Fast Switching Characteristic ID3 3.5A G D ▼ RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi
3.2. ap6n090g.pdf Size:171K _a-power
AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 60V D ▼ Fast Switching Characteristic RDS(ON) 90mΩ ▼ Simple Drive Requirement ID 2.7A S ▼ RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the
3.3. ap6n090k.pdf Size:178K _a-power
AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ S ▼ Fast Switching Characteristic ID3 4.1A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve
3.4. ap6n090n.pdf Size:188K _a-power
AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Small Package Outline RDS(ON) 90mΩ ▼ Surface Mount Device ID 2.5A S ▼ RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
Другие MOSFET... AP9971GM , AP9975GM , AP9970GK , AP09T10GK , AP10TN135K , AP30T10GK , AP60WN4K9K , AP6N090K , BS170 , AP6P250K , AP04N20GK , APA2N70K , AP18P10GK , AP70SL1K4BK2 , AP10P500N , AP10TN135N , AP2302AGN .
Список транзисторов
Обновления
MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |