Справочник MOSFET. AP18P10GK

 

AP18P10GK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP18P10GK
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для AP18P10GK

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP18P10GK Datasheet (PDF)

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ap18p10gk.pdfpdf_icon

AP18P10GK

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to

 0.1. Size:91K  ape
ap18p10gk-hf.pdfpdf_icon

AP18P10GK

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design and siliconprocess technology to

 6.1. Size:174K  ape
ap18p10gh.pdfpdf_icon

AP18P10GK

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 6.2. Size:169K  ape
ap18p10gm.pdfpdf_icon

AP18P10GK

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

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History: TPB65R075DFD | AOTF190A60L | IXTA3N50D2 | 10N60L-TF3T-T | 2SK3833 | 12P10L-TN3-R | BSC350N20NSFD

 

 
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