AP70SL1K4BK2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP70SL1K4BK2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.78 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 15 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: SOT223-2L
Аналог (замена) для AP70SL1K4BK2
AP70SL1K4BK2 Datasheet (PDF)
ap70sl1k4bk2.pdf

AP70SL1K4BK2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDDescriptionAP70SL1K4B series are from Advanced Power innovated designSand silicon process technology to achiev
ap70sl1k4bjb.pdf

AP70SL1K4BJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designand silicon process technology to achieve the
ap70sl1k4bh.pdf

AP70SL1K4BHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4B series are from Advanced Power innovated designGand silicon process technology to achieve th
ap70sl1k4ajb.pdf

AP70SL1K4AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 1.4 Simple Drive Requirement ID3 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL1K4A series are from Advanced Power innovated designand silicon process technology to achi
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History: MSU11N50Q | 6N65KG-TF3-T
History: MSU11N50Q | 6N65KG-TF3-T



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