Справочник MOSFET. AP1332GEU

 

AP1332GEU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP1332GEU
   Маркировка: 2SS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.3 nC
   trⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: SOT323

 Аналог (замена) для AP1332GEU

 

 

AP1332GEU Datasheet (PDF)

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 ap1332geu.pdf

AP1332GEU AP1332GEU

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 0.6 Small Package Outline ID3 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAP1332 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 0.1. Size:56K  ape
 ap1332geu-hf.pdf

AP1332GEU AP1332GEU

AP1332GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Simple Gate Drive RDS(ON) 600m Small Package Outline ID 600mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, low on-res

 6.1. Size:58K  ape
 ap1332gev-hf.pdf

AP1332GEU AP1332GEU

AP1332GEV-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mAS RoHS Compliant & Halogen-FreeSC-75GDDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, low on-re

 9.1. Size:57K  ape
 ap1334geu-hf.pdf

AP1332GEU AP1332GEU

AP1334GEU-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 1.8V Gate Drive RDS(ON) 50m Optimal DC/DC Battery Application ID 2.1AS Halogen Free & RoHS Compliant ProductSOT-323GDDescriptionAP1334 series are from Advanced Power innovated design andGsilicon process tech

 9.2. Size:93K  ape
 ap1333gu.pdf

AP1332GEU AP1332GEU

AP1333GURoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mASSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching, low on-resistance and cost-eff

 9.3. Size:93K  ape
 ap1333gu-hf.pdf

AP1332GEU AP1332GEU

AP1333GU-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mAS RoHS Compliant & Halogen-FreeSOT-323GDescriptionAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switchi

 9.4. Size:882K  cn vbsemi
 ap1333gu.pdf

AP1332GEU AP1332GEU

AP1333GUwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

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