AP9922GEO - описание и поиск аналогов

AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 16m G1 S1 S1 Optimal DC/DC Battery Application ID 6.4A TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer wi

AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 16m G1 S1 Optimal DC/DC Battery Application S1 ID 6.4A TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer wi

AP9922AGEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 1.8V Gate Drive RDS(ON) 18m G1 S1 Optimal DC/DC Battery Application S1 ID 6A TSSOP-8 D1 Halogen Free & RoHS Compliant Product Description D1 D2 AP9922A series are from Advanced Power innovated des

AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te

AP9928GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 23m G1 S1 Optimal DC/DC battery application S1 ID 5A TSSOP-8 D1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G

AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low On-Resistance BVDSS -12V S2 S2 D2 Small & Thin Package RDS(ON) 25m G1 Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best c

AP9926GO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 ID 4.6A TSSOP-8 D1 Surface mount package Description D2 The Advanced Power MOSFETs fr

AP9924AGO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 22m Halogen Free & RoHS Compliant Product ID 5A G2 S2 S2 D Description G1 S1 S1 TSSOP-8 D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

AP9924GO RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance S2 BVDSS 20V S2 D Capable of 2.5V gate drive RDS(ON) 20m G1 S1 S1 RoHS Compliant ID 6.8A TSSOP-8 D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized devic

AP9920GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 30V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Optimal DC/DC battery application S1 ID 4.9A TSSOP-8 D1 RoHS compliant Description The Advanced Power MOSFE

AP9926GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series ar

AP9928GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 D1 Capable of 2.5V gate drive RDS(ON) 23m D1 Surface mount package ID 7.3A G2 S2 G1 SO-8 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G2 designer

AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current ID 6A G2 S2 Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast sw

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low On-Resistance BVDSS -12V S2 S2 D2 Small & Thin Package RDS(ON) 25m G1 Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best c

AP9928A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9928A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =10.5A DS D R

AP9926A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9926A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R