AP75T12GI Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP75T12GI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 41 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 470 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP75T12GI
AP75T12GI Datasheet (PDF)
ap75t12gi.pdf

AP75T12GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 12.5m RoHS Compliant & Halogen-Free ID 41AGSDescriptionAP75T12 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDresistance
ap75t12gi-hf.pdf

AP75T12GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 12.5m RoHS Compliant & Halogen-Free ID 41AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gres
ap75t12gp-hf.pdf

AP75T12GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 15m RoHS Compliant & Halogen-Free ID 66AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
ap75t12gp.pdf

AP75T12GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower On-resistance RDS(ON) 12.5m RoHS Compliant & Halogen-Free ID 72AGSDescriptionAP75T12 series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and fas
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