AP70WN2K8I Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP70WN2K8I
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 34 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP70WN2K8I
AP70WN2K8I Datasheet (PDF)
ap70wn2k8i.pdf

AP70WN2K8IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap70wn2k8h.pdf

AP70WN2K8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on
ap70wn2k8l.pdf

AP70WN2K8LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 2.8 Fast Switching Characteristic ID3 4AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN2K8 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
ap70wn1k5p.pdf

AP70WN1K5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 700VD Simple Drive Requirement RDS(ON) 1.5 Fast Switching Characteristic ID3 6AG RoHS Compliant & Halogen-FreeSDescriptionAP70WN1K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re
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History: CHM2331GP | AFP4435W



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
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