AP70SL950AJB Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP70SL950AJB
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 36.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 20 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
Тип корпуса: TO251S
- подбор MOSFET транзистора по параметрам
AP70SL950AJB Datasheet (PDF)
ap70sl950ajb.pdf

AP70SL950AJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.95 Simple Drive Requirement ID3 4.5AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL950A series are from Advanced Power innovated design andsilicon process technology to ach
ap70sl950aj.pdf

AP70SL950AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 0.95 Simple Drive Requirement ID3 4.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP70SL950A series are from Advanced Power innovated design andDSTO-251(J)silicon process techno
ap70sl950ai.pdf

AP70SL950AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 0.95 Simple Drive Requirement ID 4.5AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL950A series are from Advanced Power innovated design andsilicon process technology to achieve the l
ap70sl950ah.pdf

AP70SL950AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 750VD Fast Switching Characteristic RDS(ON) 0.95 Simple Drive Requirement ID3 4.5AG RoHS Compliant & Halogen-FreeSDescriptionAP70SL950A series are from Advanced Power innovated design andGsilicon process technology to a
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: GP2M010A060X | STM6916 | CS4N65A3TDY | STB12NM50ND | TMD5N40ZG | PMGD290XN | BSP89
History: GP2M010A060X | STM6916 | CS4N65A3TDY | STB12NM50ND | TMD5N40ZG | PMGD290XN | BSP89



Список транзисторов
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