AP70SL1K4BH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP70SL1K4BH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28.4 W
Предельно допустимое напряжение сток-исток (Uds): 700 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 5 V
Максимально допустимый постоянный ток стока (Id): 3.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 15 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO252
Аналог (замена) для AP70SL1K4BH
AP70SL1K4BH Datasheet (PDF)
1.1. ap70sl1k4ai.pdf 
Size:178K _a-power
AP70SL1K4AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3,4 3.2A G ▼ RoHS Compliant & Halogen-Free S Description AP70SL1K4A series are from Advanced Power innovated design and silicon process technology to achieve the
1.2. ap70sl1k4bh.pdf Size:206K _a-power
AP70SL1K4BH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3 3.2A G ▼ RoHS Compliant & Halogen-Free S Description AP70SL1K4B series are from Advanced Power innovated design G and silicon process technology to achieve th
1.3. ap70sl1k4ajb.pdf Size:181K _a-power
AP70SL1K4AJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 750V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3 3.2A G ▼ RoHS Compliant & Halogen-Free S Description AP70SL1K4A series are from Advanced Power innovated design and silicon process technology to achi
1.4. ap70sl1k4ah.pdf Size:203K _a-power
AP70SL1K4AH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test VDS @ Tj,max. 750V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3 3.2A G ▼ RoHS Compliant & Halogen-Free S Description AP70SL1K4A series are from Advanced Power innovated design G and silicon process technology to ac
1.5. ap70sl1k4bk2.pdf Size:109K _a-power
AP70SL1K4BK2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3 3.2A G ▼ RoHS Compliant & Halogen-Free S D Description AP70SL1K4B series are from Advanced Power innovated design S and silicon process technology to achiev
1.6. ap70sl1k4bjb.pdf Size:146K _a-power
AP70SL1K4BJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 700V D ▼ Fast Switching Characteristic RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID3 3.2A G ▼ RoHS Compliant & Halogen-Free S Description AP70SL1K4B series are from Advanced Power innovated design and silicon process technology to achieve the
Другие MOSFET... AP70SL500AH , AP70SL380AS , AP70SL380AJ , AP70SL380AI , AP70SL380AH , AP70SL250AS , AP70SL250AI , AP70SL1K4BJB , J310 , AP70SL1K4AJB , AP70SL1K4AI , AP70SL1K4AH , AP70PN1R1I , AP6P090J , AP6P090H , AP6P070S , AP6P070P .
Список транзисторов
Обновления
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