Справочник MOSFET. AP6P090H

 

AP6P090H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP6P090H
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 36.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP6P090H

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP6P090H Datasheet (PDF)

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 ap6p090h.pdf pdf_icon

AP6P090H

AP6P090HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 7.1. Size:169K  ape
 ap6p090j.pdf pdf_icon

AP6P090H

AP6P090JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 7.2. Size:186K  ape
 ap6p090m.pdf pdf_icon

AP6P090H

AP6P090MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P090 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

 9.1. Size:181K  ape
 ap6p064i.pdf pdf_icon

AP6P090H

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

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Другие MOSFET... AP70SL250AI , AP70SL1K4BJB , AP70SL1K4BH , AP70SL1K4AJB , AP70SL1K4AI , AP70SL1K4AH , AP70PN1R1I , AP6P090J , IRFP250 , AP6P070S , AP6P070P , AP6P070I , AP6P070H , AP6P064JB , AP6P064J , AP6P064I , AP6P064H .

History: SSM5N16FE | IPB60R160C6 | AOI600A60 | 5N65G-TN3-R | FDMA86108LZ | CJP10N65

 

 
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