AP6P025H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP6P025H
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 240 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
AP6P025H Datasheet (PDF)
ap6p025h.pdf

AP6P025HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low
ap6p025m.pdf

AP6P025MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID3 -7.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P025 series are from Advanced Power innovated design and siliconDDprocess technology to achieve
ap6p025s.pdf

AP6P025SHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap6p025p.pdf

AP6P025PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAP6P025 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRLR3714Z | IPU60R1K0CE
History: IRLR3714Z | IPU60R1K0CE



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