AP6N3R5LIN - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP6N3R5LIN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 32.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 2830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP6N3R5LIN
AP6N3R5LIN Datasheet (PDF)
ap6n3r5lin.pdf
AP6N3R5LINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desi
ap6n3r5li.pdf
AP6N3R5LIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP6N3R5L series are from AdvancedPower innovated desig
ap6n3r5i.pdf
AP6N3R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design anda
ap6n3r5p.pdf
AP6N3R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP6N3R5 seriesare fromAdvanced Power innovated design and
Другие MOSFET... AP6N6R5H , AP6N4R2P , AP6N4R0I , AP6N3R8H , AP6N3R7MT-L , AP6N3R7MT , AP6N3R5S , AP6N3R5P , STP65NF06 , AP6N3R5LI , AP6N3R5I , AP6N3R4CMT-L , AP6N3R4CMT , AP6N3R2P , AP6N3R1LH , AP6N3R0LMT , AP6N2R0P .
History: NTD4806N-1G | SSF65R065SFD3 | SSF60R260S2E | BRCS12N65BD | SSF60R190SFD2
History: NTD4806N-1G | SSF65R065SFD3 | SSF60R260S2E | BRCS12N65BD | SSF60R190SFD2
Список транзисторов
Обновления
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
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