AP6N3R4CMT-L. Аналоги и основные параметры
Наименование производителя: AP6N3R4CMT-L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 2220 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
Тип корпуса: PMPAK5X6L
Аналог (замена) для AP6N3R4CMT-L
- подборⓘ MOSFET транзистора по параметрам
AP6N3R4CMT-L даташит
..1. Size:318K ape
ap6n3r4cmt-l.pdf 

AP6N3R4CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology
4.1. Size:162K ape
ap6n3r4cmt.pdf 

AP6N3R4CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D SO-8 Compatible with Heatsink RDS(ON) 3.4m Ultra Low On-resistance ID4 130A G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R4C series are from Advanced Power innovated design and silicon process technology to
8.1. Size:183K ape
ap6n3r5i.pdf 

AP6N3R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 72A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and a
8.2. Size:205K ape
ap6n3r8h.pdf 

AP6N3R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.8m Fast Switching Characteristic ID5 155A G RoHS Compliant & Halogen-Free S Description G AP6N3R8 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to
8.3. Size:335K ape
ap6n3r7mt.pdf 

AP6N3R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 3.7m Ultra Low On-resistance ID4 130A RoHS Compliant & Halogen-Free G D S D D Description D AP6N3R7 series are from Advanced Power innovated design and silicon process technology to achieve the l
8.4. Size:206K ape
ap6n3r2p.pdf 

AP6N3R2P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 3.2m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R2 seriesare fromAdvanced Power innovated design and
8.5. Size:168K ape
ap6n3r5p.pdf 

AP6N3R5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and
8.6. Size:179K ape
ap6n3r5s.pdf 

AP6N3R5S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.58m Low On-resistance ID 130A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N3R5 seriesare fromAdvanced Power innovated design and
8.7. Size:183K ape
ap6n3r5li.pdf 

AP6N3R5LI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP6N3R5L series are from AdvancedPower innovated desig
8.8. Size:320K ape
ap6n3r7mt-l.pdf 

AP6N3R7MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 3.75m Ultra Low On-resistance RoHS Compliant & Halogen-Free G D S D D Description D AP6N3R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
8.9. Size:218K ape
ap6n3r5lin.pdf 

AP6N3R5LIN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.5m Ultra Low On-resistance ID 75A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP6N3R5L series are from AdvancedPower innovated desi
8.10. Size:161K ape
ap6n3r0lmt.pdf 

AP6N3R0LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 2.99m Lower On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP6N3R0L series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
8.11. Size:205K ape
ap6n3r1lh.pdf 

AP6N3R1LH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.1m Low On-resistance ID 100A G G RoHS Compliant & Halogen-Free S S Description G AP4604 series are from Advanced Powerinnovated design AP6N3R1L series are from AdvancedPower innovated design
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History: WMB023N03LG2
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