AP65SL600AIN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP65SL600AIN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 27.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 28 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F-NL
- подбор MOSFET транзистора по параметрам
AP65SL600AIN Datasheet (PDF)
ap65sl600ain.pdf

AP65SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
ap65sl600ai.pdf

AP65SL600AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
ap65sl600ah.pdf

AP65SL600AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andGsilicon process technology to achie
ap65sl600aj.pdf

AP65SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design and GDSTO-251(J)silicon process tec
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: DMG9N65CT | SDF120JDA-D | KNB1906A | DG840 | FDPF8N50NZU | IRLU3715 | HFD1N60F
History: DMG9N65CT | SDF120JDA-D | KNB1906A | DG840 | FDPF8N50NZU | IRLU3715 | HFD1N60F



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