AP65SL600AIN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP65SL600AIN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 27.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 28 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP65SL600AIN
AP65SL600AIN Datasheet (PDF)
ap65sl600ain.pdf

AP65SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
ap65sl600ai.pdf

AP65SL600AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andsilicon process technology to achieve
ap65sl600ah.pdf

AP65SL600AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design andGsilicon process technology to achie
ap65sl600aj.pdf

AP65SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL600A series are from Advanced Power innovated design and GDSTO-251(J)silicon process tec
Другие MOSFET... AP65WN2K3H , AP65WN1K5S , AP65WN1K5I , AP65WN1K0I , AP65SL600DI , AP65SL600DH , AP65SL600AR , AP65SL600AJ , AON6414A , AP65SL600AI , AP65SL600AH , AP65SL380DI , AP65SL380DH , AP65SL380BR , AP65SL380BI , AP65SL380AIN , AP65SL380AI .
History: BL7N65B-A | IPD082N10N3G | AM40P10-200P | PHK18NQ03LT | CS10N65FA9HD | RFT2P03L
History: BL7N65B-A | IPD082N10N3G | AM40P10-200P | PHK18NQ03LT | CS10N65FA9HD | RFT2P03L



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