AP65PN2R6I - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP65PN2R6I
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 25 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP65PN2R6I
AP65PN2R6I Datasheet (PDF)
ap65pn2r6i.pdf
AP65PN2R6IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap65pn2r6l.pdf
AP65PN2R6LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap65pn2r6h.pdf
AP65PN2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andGsilicon process technology to achieve the
ap65pn2r6p.pdf
AP65PN2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.6 Simple Drive Requirement ID3 3.5AG RoHS Compliant & Halogen-FreeSDescriptionAP65PN2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the low
Другие MOSFET... AP65SL099DR , AP65SL099DI , AP65SL099AWL , AP65SL099AS , AP65SL045AFWL , AP65SL041AWL , AP65PN2R6P , AP65PN2R6L , IRFP450 , AP65PN2R6H , AP65PN2R5I , AP65PN1R4P , AP60WN720IN , AP60WN720I , AP60WN650I , AP60WN4K9P , AP60WN4K9J .
History: AO6401 | STP75NS04Z | TSM4416DCS | 2SK3435-ZJ | PPMET20V08 | 2SK3456-S | TSM4425CS
History: AO6401 | STP75NS04Z | TSM4416DCS | 2SK3435-ZJ | PPMET20V08 | 2SK3456-S | TSM4425CS
Список транзисторов
Обновления
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