AP60WN720IN. Аналоги и основные параметры
Наименование производителя: AP60WN720IN
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 36.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 75 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.72 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP60WN720IN
- подборⓘ MOSFET транзистора по параметрам
AP60WN720IN даташит
..1. Size:211K ape
ap60wn720in.pdf 
AP60WN720IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60WN720 series are from the innovated design and silicon process technology to achieve the lowest possible on
4.1. Size:175K ape
ap60wn720i.pdf 
AP60WN720I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.72 Fast Switching Characteristic ID3 10A G RoHS Compliant & Halogen-Free S Description AP60WN720 series are from the innovated design and silicon process technology to achieve the lowest possible on-
8.1. Size:198K ape
ap60wn4k9h.pdf 
AP60WN4K9H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.2. Size:60K ape
ap60wn4k5i.pdf 
AP60WN4K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.3. Size:198K ape
ap60wn2k1h.pdf 
AP60WN2K1H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.4. Size:59K ape
ap60wn4k5h.pdf 
AP60WN4K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K5 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.5. Size:176K ape
ap60wn2k3i.pdf 
AP60WN2K3I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.6. Size:199K ape
ap60wn2k1j.pdf 
AP60WN2K1J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description G AP60WN2K1 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the
8.7. Size:212K ape
ap60wn4k9i.pdf 
AP60WN4K9I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.8. Size:199K ape
ap60wn4k9j.pdf 
AP60WN4K9J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description G AP60WN4K9 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
8.9. Size:161K ape
ap60wn1k5j.pdf 
AP60WN1K5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description G AP60WN1K5 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the
8.10. Size:59K ape
ap60wn1k2h.pdf 
AP60WN1K2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon G process technology to achieve the lowest possible on
8.11. Size:196K ape
ap60wn1k5h.pdf 
AP60WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.12. Size:176K ape
ap60wn650i.pdf 
AP60WN650I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 0.65 Fast Switching Characteristic ID3 11A G RoHS Compliant & Halogen-Free S Description AP60WN650 series are from the innovated design and silicon process technology to achieve the lowest possible on-
8.13. Size:174K ape
ap60wn1k5i.pdf 
AP60WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.14. Size:211K ape
ap60wn1k2in.pdf 
AP60WN1K2IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
8.15. Size:59K ape
ap60wn1k2j.pdf 
AP60WN1K2J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description G AP60WN1K2 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l
8.16. Size:198K ape
ap60wn2k3h.pdf 
AP60WN2K3H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.37 Fast Switching Characteristic ID3 4A G RoHS Compliant & Halogen-Free S Description AP60WN2K3 series are from the innovated design and silicon G process technology to achieve the lowest possible o
8.17. Size:135K ape
ap60wn4k9k.pdf 
AP60WN4K9K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S D Description S AP60WN4K9 series are from the innovated design and silicon D process technology to achieve the lowest possi
8.18. Size:160K ape
ap60wn4k9p.pdf 
AP60WN4K9P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2A G RoHS Compliant & Halogen-Free S Description AP60WN4K9 series are from the innovated design and silicon process technology to achieve the lowest possible on-re
8.19. Size:213K ape
ap60wn2k1i.pdf 
AP60WN2K1I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 2.07 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP60WN2K1 series are from the innovated design and silicon process technology to achieve the lowest possible on-r
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