Справочник MOSFET. AP60WN4K5H

 

AP60WN4K5H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP60WN4K5H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 19 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP60WN4K5H

 

 

AP60WN4K5H Datasheet (PDF)

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 ap60wn4k5h.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K5 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 5.1. Size:60K  ape
 ap60wn4k5i.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.5 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K5 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 6.1. Size:198K  ape
 ap60wn4k9h.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K9HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconGprocess technology to achieve the lowest possible on

 6.2. Size:212K  ape
 ap60wn4k9i.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K9IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

 6.3. Size:199K  ape
 ap60wn4k9j.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K9JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionGAP60WN4K9 series are from the innovated design and siliconDSTO-251(J)process technology to achieve the l

 6.4. Size:135K  ape
 ap60wn4k9k.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K9KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDDescriptionSAP60WN4K9 series are from the innovated design and siliconDprocess technology to achieve the lowest possi

 6.5. Size:160K  ape
 ap60wn4k9p.pdf

AP60WN4K5H AP60WN4K5H

AP60WN4K9PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test BVDSS 600VD Simple Drive Requirement RDS(ON) 4.9 Fast Switching Characteristic ID3 2AG RoHS Compliant & Halogen-FreeSDescriptionAP60WN4K9 series are from the innovated design and siliconprocess technology to achieve the lowest possible on-re

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