AP60WN1K5H. Аналоги и основные параметры

Наименование производителя: AP60WN1K5H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 44 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm

Тип корпуса: TO252

Аналог (замена) для AP60WN1K5H

- подборⓘ MOSFET транзистора по параметрам

 

AP60WN1K5H даташит

 ..1. Size:196K  ape
 ap60wn1k5h.pdf pdf_icon

AP60WN1K5H

AP60WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o

 5.1. Size:161K  ape
 ap60wn1k5j.pdf pdf_icon

AP60WN1K5H

AP60WN1K5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description G AP60WN1K5 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the

 5.2. Size:174K  ape
 ap60wn1k5i.pdf pdf_icon

AP60WN1K5H

AP60WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description AP60WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 6.1. Size:59K  ape
 ap60wn1k2h.pdf pdf_icon

AP60WN1K5H

AP60WN1K2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon G process technology to achieve the lowest possible on

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP60WN4K5H, AP60WN2K3I, AP60WN2K3H, AP60WN2K1J, AP60WN2K1I, AP60WN2K1H, AP60WN1K5J, AP60WN1K5I, 8N60, AP60WN1K2J, AP60WN1K2IN, AP60WN1K2H, AP60SL650AFI, AP60SL650AFH, AP60SL600DI, AP60SL600DH, AP60SL600AJ